IGBT modul MII200-12A4 N-kanálový 270 A 1200 V, Y3 DCB, počet kolíků: 7 Sériové zapojení

Skladové číslo RS: 193-650Značka: IXYSČíslo dielu výrobcu: MII200-12A4
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Technické dokumenty

Špecifikácie

Brand

IXYS

Dauer-Kollektorstrom max.

270 A

Kollektor-Emitter-

1200 V

Maximální napětí řídicí elektroda/emitor

±20V

Gehäusegröße

Y3 DCB

Konfiguration

Series

Montage-Typ

Upevnění šroubem

Typ kanálu

N

Počet kolíků

7

Konfigurace tranzistoru

Series

Abmessungen

110 x 62 x 30mm

Betriebstemperatur min.

-40 °C

Betriebstemperatur max.

150 °C

Podrobnosti o výrobku

IGBT moduly IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Informácie o zásobách sú dočasne nedostupné.

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Informácie o zásobách sú dočasne nedostupné.

P.O.A.

IGBT modul MII200-12A4 N-kanálový 270 A 1200 V, Y3 DCB, počet kolíků: 7 Sériové zapojení

P.O.A.

IGBT modul MII200-12A4 N-kanálový 270 A 1200 V, Y3 DCB, počet kolíků: 7 Sériové zapojení
Informácie o zásobách sú dočasne nedostupné.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technické dokumenty

Špecifikácie

Brand

IXYS

Dauer-Kollektorstrom max.

270 A

Kollektor-Emitter-

1200 V

Maximální napětí řídicí elektroda/emitor

±20V

Gehäusegröße

Y3 DCB

Konfiguration

Series

Montage-Typ

Upevnění šroubem

Typ kanálu

N

Počet kolíků

7

Konfigurace tranzistoru

Series

Abmessungen

110 x 62 x 30mm

Betriebstemperatur min.

-40 °C

Betriebstemperatur max.

150 °C

Podrobnosti o výrobku

IGBT moduly IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more