IGBT FGH40T100SMD N-kanálový 80 A 1000 V, TO-247, počet kolíků: 3 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
ON SemiconductorDauer-Kollektorstrom max.
80 A
Maximální napětí emitoru/kolektoru
1000 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
333 W
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
15.87 x 4.82 x 20.82mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
Diskrétní Fairchild Semiconductor, 1000 V a více
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
P.O.A.
Štandardný
2
P.O.A.
Štandardný
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
ON SemiconductorDauer-Kollektorstrom max.
80 A
Maximální napětí emitoru/kolektoru
1000 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
333 W
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
15.87 x 4.82 x 20.82mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
Diskrétní Fairchild Semiconductor, 1000 V a více
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products