IGBT FGH40N60SFDTU N-kanálový 80 A 600 V, TO-247, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
80 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
290 W
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Typ kanálu
N
Počet kolíků
3
Konfigurace tranzistoru
Single
Abmessungen
15.6 x 4.7 x 20.6mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
150 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 4,002
Each (In a Tube of 30) (bez DPH)
30
€ 4,002
Each (In a Tube of 30) (bez DPH)
30
Kúpiť hromadne
| množstvo | Jednotková cena | Tuba |
|---|---|---|
| 30 - 30 | € 4,002 | € 120,06 |
| 60 - 120 | € 3,882 | € 116,45 |
| 150 - 270 | € 3,763 | € 112,88 |
| 300+ | € 3,601 | € 108,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
80 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
290 W
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Typ kanálu
N
Počet kolíků
3
Konfigurace tranzistoru
Single
Abmessungen
15.6 x 4.7 x 20.6mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
150 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products