IGBT IXGH16N170 N-kanálový 32 A 1700 V, TO-247AD, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
32 A
Maximální napětí emitoru/kolektoru
1700 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
TO-247AD
Montage-Typ
Through Hole
Typ kanálu
N
Počet kolíků
3
Konfigurace tranzistoru
Single
Abmessungen
16.26 x 5.3 x 21.46mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
+150 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 10,00
€ 10,00 Each (bez DPH)
1
€ 10,00
€ 10,00 Each (bez DPH)
1
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
| množstvo | Jednotková cena |
|---|---|
| 1 - 9 | € 10,00 |
| 10 - 19 | € 8,69 |
| 20+ | € 8,27 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
32 A
Maximální napětí emitoru/kolektoru
1700 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
TO-247AD
Montage-Typ
Through Hole
Typ kanálu
N
Počet kolíků
3
Konfigurace tranzistoru
Single
Abmessungen
16.26 x 5.3 x 21.46mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
+150 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products