IGBT IXGH32N170 N-kanálový 75 A 1700 V, TO-247AD, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
75 A
Maximální napětí emitoru/kolektoru
1700 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
TO-247AD
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Länge
16.26mm
Breite
5.3mm
Höhe
21.46mm
Abmessungen
16.26 x 5.3 x 21.46mm
Maximální pracovní teplota
+150 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 19,94
€ 19,94 Each (bez DPH)
1
€ 19,94
€ 19,94 Each (bez DPH)
1
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
| Množstvo | Jednotková cena |
|---|---|
| 1 - 4 | € 19,94 |
| 5 - 19 | € 17,17 |
| 20 - 49 | € 16,45 |
| 50 - 99 | € 14,92 |
| 100+ | € 14,54 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
75 A
Maximální napětí emitoru/kolektoru
1700 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
TO-247AD
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Länge
16.26mm
Breite
5.3mm
Höhe
21.46mm
Abmessungen
16.26 x 5.3 x 21.46mm
Maximální pracovní teplota
+150 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products