IGBT STGW20NC60VD N-kanálový 60 A 600 V, TO-247, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
60 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Typ kanálu
N
Počet kolíků
3
Konfigurace tranzistoru
Single
Abmessungen
15.75 x 5.15 x 20.15mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
+150 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 65,52
€ 2,184 Each (In a Tube of 30) (bez DPH)
30
€ 65,52
€ 2,184 Each (In a Tube of 30) (bez DPH)
30
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
| Množstvo | Jednotková cena | Tuba |
|---|---|---|
| 30 - 60 | € 2,184 | € 65,52 |
| 90 - 480 | € 2,038 | € 61,15 |
| 510 - 960 | € 1,986 | € 59,59 |
| 990+ | € 1,936 | € 58,09 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
60 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Typ kanálu
N
Počet kolíků
3
Konfigurace tranzistoru
Single
Abmessungen
15.75 x 5.15 x 20.15mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
+150 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products