IGBT IXGH30N120B3D1 50 A 1200 V, TO-247, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
50 A
Maximální napětí emitoru/kolektoru
1200 V
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Pinanzahl
3
Konfigurace tranzistoru
Single
Betriebstemperatur max.
+150 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 258,98
€ 8,633 Each (In a Tube of 30) (bez DPH)
30
€ 258,98
€ 8,633 Each (In a Tube of 30) (bez DPH)
30
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
50 A
Maximální napětí emitoru/kolektoru
1200 V
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Pinanzahl
3
Konfigurace tranzistoru
Single
Betriebstemperatur max.
+150 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products