JFET BF861C,215 N-kanálový 25 V, SOT-23 (TO-236AB), počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Krajina pôvodu
China
Podrobnosti o výrobku
JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
10
P.O.A.
Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
10
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
Ideate. Create. Collaborate
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Technické dokumenty
Špecifikácie
Brand
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 25mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
+25 V
Maximum Drain Gate Voltage
25V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Krajina pôvodu
China
Podrobnosti o výrobku
JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products