IGBT modul MII100-12A3 N-kanálový 135 A 1200 V, Y4 M5, počet kolíků: 7 Sériové zapojení
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
135 A
Maximální napětí emitoru/kolektoru
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
Y4 M5
Konfigurace
Řada
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
7
Konfigurace tranzistoru
Series
Abmessungen
94 x 34 x 30mm
Betriebstemperatur min.
-40 °C
Maximální pracovní teplota
+150 °C
Breite
34mm
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 454,10
€ 75,683 Each (In a Box of 6) (bez DPH)
6
€ 454,10
€ 75,683 Each (In a Box of 6) (bez DPH)
6
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
135 A
Maximální napětí emitoru/kolektoru
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
Y4 M5
Konfigurace
Řada
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
7
Konfigurace tranzistoru
Series
Abmessungen
94 x 34 x 30mm
Betriebstemperatur min.
-40 °C
Maximální pracovní teplota
+150 °C
Breite
34mm
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products