řada: STripFETMOSFET STW75NF20 N-kanálový 75 A 200 V, TO-247, počet kolíků: 3 Jednoduchý Si
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
84 nC @ 10 V
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Minimum Operating Temperature
-50 °C
Height
20.15mm
Podrobnosti o výrobku
N-Channel STAFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 84,13
€ 2,804 Each (In a Tube of 30) (bez DPH)
30
€ 84,13
€ 2,804 Each (In a Tube of 30) (bez DPH)
30
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
| množstvo | Jednotková cena | Tuba |
|---|---|---|
| 30 - 30 | € 2,804 | € 84,13 |
| 60 - 120 | € 2,732 | € 81,97 |
| 150+ | € 2,664 | € 79,93 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
200 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
84 nC @ 10 V
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Minimum Operating Temperature
-50 °C
Height
20.15mm
Podrobnosti o výrobku
N-Channel STAFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products