řada: IRF7343PbFMOSFET IRF7343TRPBF N/P-kanálový-kanálový 3,4 A, 4,7 A 55 V, SO-8, počet kolíků: 8 Vyčerpání
Technické dokumenty
Špecifikácie
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Series
IRF7343PbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
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€ 2,53
€ 0,253 Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
10
€ 2,53
€ 0,253 Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
10
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
Ideate. Create. Collaborate
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Technické dokumenty
Špecifikácie
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
3.4 A, 4.7 A
Maximum Drain Source Voltage
55 V
Series
IRF7343PbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.065 Ω, 0.17 Ω
Channel Mode
Depletion
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Width
4mm
Length
5mm
Typical Gate Charge @ Vgs
2.3 nC @ 10 V, 24 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.5mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products