IGBT IXGT30N120B3D1 50 A 1200 V, TO-268, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
50 A
Maximální napětí emitoru/kolektoru
1200 V
Gehäusegröße
TO-268
Montage-Typ
Surface Mount
Pinanzahl
3
Konfigurace tranzistoru
Single
Länge
16.05mm
Breite
14mm
Höhe
5.1mm
Abmessungen
16.05 x 14 x 5.1mm
Maximální pracovní teplota
+150 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 22,91
€ 22,91 Each (bez DPH)
1
€ 22,91
€ 22,91 Each (bez DPH)
1
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
| množstvo | Jednotková cena |
|---|---|
| 1 - 1 | € 22,91 |
| 2 - 4 | € 21,78 |
| 5 - 9 | € 20,64 |
| 10 - 14 | € 19,93 |
| 15+ | € 19,01 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
50 A
Maximální napětí emitoru/kolektoru
1200 V
Gehäusegröße
TO-268
Montage-Typ
Surface Mount
Pinanzahl
3
Konfigurace tranzistoru
Single
Länge
16.05mm
Breite
14mm
Höhe
5.1mm
Abmessungen
16.05 x 14 x 5.1mm
Maximální pracovní teplota
+150 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products