IGBT ISL9V3040P3 N-kanálový 21 A 450 V, TO-220AB, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Dauer-Kollektorstrom max.
21 A
Kollektor-Emitter-
450 V
Maximální napětí řídicí elektroda/emitor
±14V
Maximální ztrátový výkon
150 W
Gehäusegröße
TO-220, TO-220AB
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 4.7 x 16.3mm
Betriebstemperatur min.
-40 °C
Maximální pracovní teplota
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 115,16
€ 2,303 Each (In a Tube of 50) (bez DPH)
50
€ 115,16
€ 2,303 Each (In a Tube of 50) (bez DPH)
50
Kúpiť hromadne
| množstvo | Jednotková cena | Tuba |
|---|---|---|
| 50 - 50 | € 2,303 | € 115,16 |
| 100 - 450 | € 1,889 | € 94,44 |
| 500 - 950 | € 1,592 | € 79,58 |
| 1000 - 2450 | € 1,448 | € 72,40 |
| 2500+ | € 1,412 | € 70,59 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Dauer-Kollektorstrom max.
21 A
Kollektor-Emitter-
450 V
Maximální napětí řídicí elektroda/emitor
±14V
Maximální ztrátový výkon
150 W
Gehäusegröße
TO-220, TO-220AB
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 4.7 x 16.3mm
Betriebstemperatur min.
-40 °C
Maximální pracovní teplota
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products