Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsTransistor-Typ
NPN
Dauer-Kollektorstrom max.
8 A
Maximální napětí emitoru/kolektoru
100 V
Maximální bázové napětí emitoru
5 V
Gehäusegröße
TO-220AB
Montage-Typ
Through Hole
Pinanzahl
3
Konfigurace tranzistoru
Single
Anzahl der Elemente pro Chip
1
Minimální proudový zisk DC
1000
Maximální bázové napětí kolektoru
100 V
Kollektor-Emitter-Sättigungsspannung max.
4 V
Maximální zbytkový proud kolektoru
0.2mA
Betriebstemperatur max.
150 °C
Länge
10.4mm
Betriebstemperatur min.
-65 °C
Höhe
9.15mm
Breite
4.6mm
Abmessungen
10.4 x 4.6 x 9.15mm
Podrobnosti o výrobku
TIP122 Darlington Transistors
STMicroelectronics presents its TIP122 range of Darlington pairs. Darlington pairs or transistors are a package of two standard BJT transistors that are used to amplify weak signals from one circuit to another circuit or microprocessor.The TIP122 devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features and Benefits
- Low collector-emitter saturation voltage
- Complementary NPN -PNP transistors
Applications
- General purpose linear and switching
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 20,64
€ 0,413 Each (In a Tube of 50) (bez DPH)
50
€ 20,64
€ 0,413 Each (In a Tube of 50) (bez DPH)
50
Kúpiť hromadne
množstvo | Jednotková cena | Tuba |
---|---|---|
50 - 50 | € 0,413 | € 20,64 |
100 - 200 | € 0,388 | € 19,40 |
250+ | € 0,372 | € 18,58 |
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsTransistor-Typ
NPN
Dauer-Kollektorstrom max.
8 A
Maximální napětí emitoru/kolektoru
100 V
Maximální bázové napětí emitoru
5 V
Gehäusegröße
TO-220AB
Montage-Typ
Through Hole
Pinanzahl
3
Konfigurace tranzistoru
Single
Anzahl der Elemente pro Chip
1
Minimální proudový zisk DC
1000
Maximální bázové napětí kolektoru
100 V
Kollektor-Emitter-Sättigungsspannung max.
4 V
Maximální zbytkový proud kolektoru
0.2mA
Betriebstemperatur max.
150 °C
Länge
10.4mm
Betriebstemperatur min.
-65 °C
Höhe
9.15mm
Breite
4.6mm
Abmessungen
10.4 x 4.6 x 9.15mm
Podrobnosti o výrobku
TIP122 Darlington Transistors
STMicroelectronics presents its TIP122 range of Darlington pairs. Darlington pairs or transistors are a package of two standard BJT transistors that are used to amplify weak signals from one circuit to another circuit or microprocessor.The TIP122 devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Features and Benefits
- Low collector-emitter saturation voltage
- Complementary NPN -PNP transistors
Applications
- General purpose linear and switching
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.