řada: NexFETMOSFET CSD17307Q5A N-kanálový 73 A 30 V, VSONP, počet kolíků: 8 Jednoduchý Si

Skladové číslo RS: 827-4833PZnačka: Texas InstrumentsČíslo dielu výrobcu: CSD17307Q5A
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Technické dokumenty

Špecifikácie

Channel Type

N

Maximum Continuous Drain Current

73 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-55 °C

Podrobnosti o výrobku

N-Channel NexFET™ Power MOSFET, Texas Instruments

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€ 4,94

€ 0,494 Each (Supplied on a Reel) (bez DPH)

řada: NexFETMOSFET CSD17307Q5A N-kanálový 73 A 30 V, VSONP, počet kolíků: 8 Jednoduchý Si
Vyberte typ balenia

€ 4,94

€ 0,494 Each (Supplied on a Reel) (bez DPH)

řada: NexFETMOSFET CSD17307Q5A N-kanálový 73 A 30 V, VSONP, počet kolíků: 8 Jednoduchý Si

Informácie o zásobách sú dočasne nedostupné.

Vyberte typ balenia

Informácie o zásobách sú dočasne nedostupné.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technické dokumenty

Špecifikácie

Channel Type

N

Maximum Continuous Drain Current

73 A

Maximum Drain Source Voltage

30 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Width

5mm

Transistor Material

Si

Height

1.1mm

Minimum Operating Temperature

-55 °C

Podrobnosti o výrobku

N-Channel NexFET™ Power MOSFET, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more