Paměť FRAM FM25W256-G, SPI, 256kbit 32k x 8 bitůů 2,7 → 5,5 V, počet kolíků: 8 -40 °C až +85 °C, SOIC
Technické dokumenty
Špecifikácie
Memory Size
256kbit
Organisation
32k x 8 bitů
Typ rozhraní
SPI
Data Bus Width
8bit
Montage-Typ
Surface Mount
Package Type
SOIC, SOIC
Pinanzahl
8
Abmessungen
4.978 x 3.987 x 1.478mm
Länge
4.98mm
Breite
3.987mm
Maximum Operating Supply Voltage
5.5 V
Height
1.478mm
Maximální pracovní teplota
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Minimum Operating Temperature
-40 °C
Počet bitů na slovo
8bit
Krajina pôvodu
Thailand
Podrobnosti o výrobku
FRAM, Cypress Semiconductor
Paměť F-RAM (Ferothic Random Access Memory) je energeticky úsporná a má nejvyšší spolehlivost netěkavých pamětí RAM pro sériová i paralelní rozhraní. Díly s indexem A jsou určeny pro automobilové aplikace a jsou kvalifikovány pro AEC-Q100.
Energeticky nezávislá paměť RAM
Vysoká rychlost zápisu
Vysoká odolnost
Nízká spotřeba energie
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Informácie o zásobách sú dočasne nedostupné.
P.O.A.
Each (In a Pack of 2) (bez DPH)
2
P.O.A.
Each (In a Pack of 2) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Memory Size
256kbit
Organisation
32k x 8 bitů
Typ rozhraní
SPI
Data Bus Width
8bit
Montage-Typ
Surface Mount
Package Type
SOIC, SOIC
Pinanzahl
8
Abmessungen
4.978 x 3.987 x 1.478mm
Länge
4.98mm
Breite
3.987mm
Maximum Operating Supply Voltage
5.5 V
Height
1.478mm
Maximální pracovní teplota
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Words
32K
Minimum Operating Temperature
-40 °C
Počet bitů na slovo
8bit
Krajina pôvodu
Thailand
Podrobnosti o výrobku
FRAM, Cypress Semiconductor
Paměť F-RAM (Ferothic Random Access Memory) je energeticky úsporná a má nejvyšší spolehlivost netěkavých pamětí RAM pro sériová i paralelní rozhraní. Díly s indexem A jsou určeny pro automobilové aplikace a jsou kvalifikovány pro AEC-Q100.
Energeticky nezávislá paměť RAM
Vysoká rychlost zápisu
Vysoká odolnost
Nízká spotřeba energie
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products