IGBT ISL9V3040S3ST N-kanálový 21 A 450 V, D2PAK (TO-263), počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Dauer-Kollektorstrom max.
21 A
Kollektor-Emitter-
450 V
Maximální napětí řídicí elektroda/emitor
±14V
Maximální ztrátový výkon
150 W
Gehäusegröße
D2PAK (TO-263)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 9.65 x 4.83mm
Betriebstemperatur min.
-40 °C
Maximální pracovní teplota
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 2,56
Each (Supplied on a Reel) (bez DPH)
5
€ 2,56
Each (Supplied on a Reel) (bez DPH)
5
Kúpiť hromadne
| množstvo | Jednotková cena | Cievka |
|---|---|---|
| 5 - 5 | € 2,56 | € 12,80 |
| 10 - 95 | € 2,19 | € 10,95 |
| 100 - 245 | € 1,70 | € 8,50 |
| 250 - 495 | € 1,64 | € 8,20 |
| 500+ | € 1,51 | € 7,55 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Dauer-Kollektorstrom max.
21 A
Kollektor-Emitter-
450 V
Maximální napětí řídicí elektroda/emitor
±14V
Maximální ztrátový výkon
150 W
Gehäusegröße
D2PAK (TO-263)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 9.65 x 4.83mm
Betriebstemperatur min.
-40 °C
Maximální pracovní teplota
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products