IGBT ISL9V5036S3ST N-kanálový 46 A 420 V, D2PAK (TO-263), počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Dauer-Kollektorstrom max.
46 A
Kollektor-Emitter-
420 V
Maximální napětí řídicí elektroda/emitor
±14V
Maximální ztrátový výkon
250 W
Gehäusegröße
D2PAK (TO-263)
Montage-Typ
Surface Mount
Typ kanálu
N
Počet kolíků
3
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 9.65 x 4.83mm
Betriebstemperatur max.
175 °C
Betriebstemperatur min.
-40 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 1 705,44
€ 2,132 Each (On a Reel of 800) (bez DPH)
800
€ 1 705,44
€ 2,132 Each (On a Reel of 800) (bez DPH)
800
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Dauer-Kollektorstrom max.
46 A
Kollektor-Emitter-
420 V
Maximální napětí řídicí elektroda/emitor
±14V
Maximální ztrátový výkon
250 W
Gehäusegröße
D2PAK (TO-263)
Montage-Typ
Surface Mount
Typ kanálu
N
Počet kolíků
3
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 9.65 x 4.83mm
Betriebstemperatur max.
175 °C
Betriebstemperatur min.
-40 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products