řada: OptiMOS™ 5MOSFET BSC009NE2LS5ATMA1 N-kanálový 223 A 25 V, SuperSO8 5 x 6, počet kolíků: 8 Jednoduchý Si
Technické dokumenty
Špecifikácie
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
223 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS™ 5
Package Type
SuperSO8 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.49mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Krajina pôvodu
China
Podrobnosti o výrobku
Infineon OptiMOS™5 - výkonové tranzistory MOSF
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 10,92
€ 2,184 Each (In a Pack of 5) (bez DPH)
5
€ 10,92
€ 2,184 Each (In a Pack of 5) (bez DPH)
5
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
223 A
Maximum Drain Source Voltage
25 V
Series
OptiMOS™ 5
Package Type
SuperSO8 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.25 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
74 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+16 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.49mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Krajina pôvodu
China
Podrobnosti o výrobku
Infineon OptiMOS™5 - výkonové tranzistory MOSF
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products