DÔLEŽITÉ OZNÁMENIE O ZMENE PRÁVNEHO SUBJEKTU

1. apríla meníme právnu subjektivitu na RS Components GmbH, nové číslo VAT , ako aj bankové údaje.

Kliknutím sem získate všetky potrebné informácie.

IGBT IXGH30N120B3D1 50 A 1200 V, TO-247, počet kolíků: 3 Jednoduchý

Skladové číslo RS: 192-641Značka: IXYSČíslo dielu výrobcu: IXGH30N120B3D1
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Technické dokumenty

Špecifikácie

Brand

IXYS

Dauer-Kollektorstrom max.

50 A

Kollektor-Emitter-

1200 V

Gehäusegröße

TO-247

Montage-Typ

Through Hole

Pinanzahl

3

Konfigurace tranzistoru

Single

Betriebstemperatur min.

-55 °C

Betriebstemperatur max.

150 °C

Podrobnosti o výrobku

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Informácie o zásobách sú dočasne nedostupné.

Skúste to znovu neskôr.

Informácie o zásobách sú dočasne nedostupné.

€ 10,38

Each (bez DPH)

IGBT IXGH30N120B3D1 50 A 1200 V, TO-247, počet kolíků: 3 Jednoduchý

€ 10,38

Each (bez DPH)

IGBT IXGH30N120B3D1 50 A 1200 V, TO-247, počet kolíků: 3 Jednoduchý
Informácie o zásobách sú dočasne nedostupné.

Kúpiť hromadne

množstvoJednotková cena
1 - 9€ 10,38
10+€ 9,04

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technické dokumenty

Špecifikácie

Brand

IXYS

Dauer-Kollektorstrom max.

50 A

Kollektor-Emitter-

1200 V

Gehäusegröße

TO-247

Montage-Typ

Through Hole

Pinanzahl

3

Konfigurace tranzistoru

Single

Betriebstemperatur min.

-55 °C

Betriebstemperatur max.

150 °C

Podrobnosti o výrobku

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more