Technické dokumenty
Špecifikácie
Brand
IXYSDauer-Kollektorstrom max.
50 A
Kollektor-Emitter-
1200 V
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Počet kolíků
3
Konfigurace tranzistoru
Single
Betriebstemperatur max.
150 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 286,40
€ 9,547 Each (In a Tube of 30) (bez DPH)
30
€ 286,40
€ 9,547 Each (In a Tube of 30) (bez DPH)
30
Technické dokumenty
Špecifikácie
Brand
IXYSDauer-Kollektorstrom max.
50 A
Kollektor-Emitter-
1200 V
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Počet kolíků
3
Konfigurace tranzistoru
Single
Betriebstemperatur max.
150 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.