IXYS IGBT modul MDI75-12A3 Typ N-kanálový Jednoduchý, Y4-M5, počet kolíků: 7 kolíkový
Technické dokumenty
Špecifikácie
Brand
IXYSTyp produktu
IGBT modul
Konfigurace
Single
Typ balení
Y4-M5
Typ kanálu
Type N
Počet kolíků
7
Minimální provozní teplota
-40°C
Maximální pracovní teplota
150°C
Breite
34 mm
Länge
94mm
Výška
30mm
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informácie o zásobách sú dočasne nedostupné.
€ 351,69
€ 58,615 Each (In a Box of 6) (bez DPH)
6
€ 351,69
€ 58,615 Each (In a Box of 6) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
6
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
IXYSTyp produktu
IGBT modul
Konfigurace
Single
Typ balení
Y4-M5
Typ kanálu
Type N
Počet kolíků
7
Minimální provozní teplota
-40°C
Maximální pracovní teplota
150°C
Breite
34 mm
Länge
94mm
Výška
30mm
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products