IGBT modul MID200-12A4 N-kanálový 270 A 1200 V, Y3 DCB, počet kolíků: 5 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
270 A
Kollektor-Emitter-
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
Y3 DCB
Konfiguration
Single
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
5
Konfigurace tranzistoru
Single
Abmessungen
110 x 62 x 30mm
Betriebstemperatur min.
-40 °C
Maximální pracovní teplota
150 °C
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 126,83
Each (In a Box of 2) (bez DPH)
2
€ 126,83
Each (In a Box of 2) (bez DPH)
2
Kúpiť hromadne
| množstvo | Jednotková cena | Škatuľa |
|---|---|---|
| 2 - 8 | € 126,83 | € 253,66 |
| 10 - 18 | € 123,54 | € 247,08 |
| 20+ | € 120,49 | € 240,98 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
IXYSMaximální stejnosměrný proud kolektoru
270 A
Kollektor-Emitter-
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
Y3 DCB
Konfiguration
Single
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
5
Konfigurace tranzistoru
Single
Abmessungen
110 x 62 x 30mm
Betriebstemperatur min.
-40 °C
Maximální pracovní teplota
150 °C
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products