Technické dokumenty
Špecifikácie
Brand
IXYSDauer-Kollektorstrom max.
90 A
Kollektor-Emitter-
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
Y4 M5
Konfiguration
Single
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
7
Konfigurace tranzistoru
Single
Abmessungen
94 x 34 x 30mm
Betriebstemperatur min.
-40 °C
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
P.O.A.
1
P.O.A.
1
Technické dokumenty
Špecifikácie
Brand
IXYSDauer-Kollektorstrom max.
90 A
Kollektor-Emitter-
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
Y4 M5
Konfiguration
Single
Montage-Typ
Panel Mount
Typ kanálu
N
Pinanzahl
7
Konfigurace tranzistoru
Single
Abmessungen
94 x 34 x 30mm
Betriebstemperatur min.
-40 °C
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.