IGBT modul MIXA450PF1200TSF N-kanálový 650 A 1200 V, SimBus F, počet kolíků: 11 Sériové zapojení
Technické dokumenty
Špecifikácie
Brand
IXYSDauer-Kollektorstrom max.
650 A
Kollektor-Emitter-
1200 V
Maximální napětí řídicí elektroda/emitor
±30V
Maximální ztrátový výkon
2.1 kW
Gehäusegröße
SimBus F
Konfiguration
Dual
Montage-Typ
PCB Mount
Typ kanálu
N
Pinanzahl
11
Konfigurace tranzistoru
Series
Abmessungen
152 x 62 x 17mm
Maximální pracovní teplota
150 °C
Betriebstemperatur min.
-40 °C
Krajina pôvodu
Germany
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 169,35
Each (In a Box of 3) (bez DPH)
3
€ 169,35
Each (In a Box of 3) (bez DPH)
3
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
IXYSDauer-Kollektorstrom max.
650 A
Kollektor-Emitter-
1200 V
Maximální napětí řídicí elektroda/emitor
±30V
Maximální ztrátový výkon
2.1 kW
Gehäusegröße
SimBus F
Konfiguration
Dual
Montage-Typ
PCB Mount
Typ kanálu
N
Pinanzahl
11
Konfigurace tranzistoru
Series
Abmessungen
152 x 62 x 17mm
Maximální pracovní teplota
150 °C
Betriebstemperatur min.
-40 °C
Krajina pôvodu
Germany
Podrobnosti o výrobku
IGBT moduly IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products