IGBT NGTG12N60TF1G N-kanálový 88 A (pulzní) 600 V, TO-3PF, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
ON SemiconductorDauer-Kollektorstrom max.
88 A (pulzní)
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
54 W
Gehäusegröße
TO-3PF
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
15.5 x 5.5 x 26.5mm
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
IGBT Discretes, ON Semiconductor
Izolované bipolární tranzistory hradla (IGBT) pro pohon motoru a další aplikace s vysokoproudovým spínáním.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Skúste to znovu neskôr.
P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
ON SemiconductorDauer-Kollektorstrom max.
88 A (pulzní)
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
54 W
Gehäusegröße
TO-3PF
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
15.5 x 5.5 x 26.5mm
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
IGBT Discretes, ON Semiconductor
Izolované bipolární tranzistory hradla (IGBT) pro pohon motoru a další aplikace s vysokoproudovým spínáním.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products