IGBT TIG058E8-TL-H N-kanálový 150 A 400 V, ECH, počet kolíků: 8 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
ON SemiconductorMaximální stejnosměrný proud kolektoru
150 A
Kollektor-Emitter-
400 V
Maximální napětí řídicí elektroda/emitor
±6V
Gehäusegröße
ECH
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
8
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
2.9 x 2.3 x 0.9mm
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
IGBT Discretes, ON Semiconductor
Izolované bipolární tranzistory hradla (IGBT) pro pohon motoru a další aplikace s vysokoproudovým spínáním.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Skúste to znovu neskôr.
P.O.A.
10
P.O.A.
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
ON SemiconductorMaximální stejnosměrný proud kolektoru
150 A
Kollektor-Emitter-
400 V
Maximální napětí řídicí elektroda/emitor
±6V
Gehäusegröße
ECH
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
8
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
2.9 x 2.3 x 0.9mm
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
IGBT Discretes, ON Semiconductor
Izolované bipolární tranzistory hradla (IGBT) pro pohon motoru a další aplikace s vysokoproudovým spínáním.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products