IGBT FGA40N65SMD N-kanálový 40 A 650 V, TO-3PN, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
onsemiMaximální stejnosměrný proud kolektoru
40 A
Kollektor-Emitter-
650 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
349 W
Gehäusegröße
TO-3P W, TO-3PN
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
16.2 x 5 x 20.1mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 2,91
Each (In a Tube of 30) (bez DPH)
30
€ 2,91
Each (In a Tube of 30) (bez DPH)
30
Kúpiť hromadne
| množstvo | Jednotková cena | Tuba |
|---|---|---|
| 30 - 30 | € 2,91 | € 87,30 |
| 60+ | € 2,73 | € 81,90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiMaximální stejnosměrný proud kolektoru
40 A
Kollektor-Emitter-
650 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
349 W
Gehäusegröße
TO-3P W, TO-3PN
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
16.2 x 5 x 20.1mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products