IGBT FGAF40N60SMD N-kanálový 80 A 600 V, TO-3PF, počet kolíků: 3 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
80 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
115 W
Gehäusegröße
TO-3PF
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
15.7 x 3.2 x 26.7mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 4,17
Each (In a Tube of 30) (bez DPH)
30
€ 4,17
Each (In a Tube of 30) (bez DPH)
30
Kúpiť hromadne
| množstvo | Jednotková cena | Tuba |
|---|---|---|
| 30 - 30 | € 4,17 | € 125,10 |
| 60+ | € 3,96 | € 118,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
80 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
115 W
Gehäusegröße
TO-3PF
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
15.7 x 3.2 x 26.7mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products