IGBT FGAF40N60UFTU N-kanálový 40 A 600 V, TO-3PF, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
onsemiMaximální stejnosměrný proud kolektoru
40 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
100 W
Gehäusegröße
TO-3PF
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
15.5 x 5.5 x 26.5mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
150 °C
Krajina pôvodu
China
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 2,37
Each (In a Tube of 30) (bez DPH)
30
€ 2,37
Each (In a Tube of 30) (bez DPH)
30
Kúpiť hromadne
| množstvo | Jednotková cena | Tuba |
|---|---|---|
| 30 - 30 | € 2,37 | € 71,10 |
| 60 - 120 | € 2,18 | € 65,40 |
| 150 - 270 | € 2,05 | € 61,50 |
| 300+ | € 1,89 | € 56,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiMaximální stejnosměrný proud kolektoru
40 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
100 W
Gehäusegröße
TO-3PF
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
15.5 x 5.5 x 26.5mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
150 °C
Krajina pôvodu
China
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products