IGBT HGT1S10N120BNST N-kanálový 80 A 1200 V, D2PAK (TO-263), počet kolíků: 3 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
80 A
Kollektor-Emitter-
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
298 W
Gehäusegröße
D2PAK (TO-263)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 11.33 x 4.83mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
Diskrétní Fairchild Semiconductor, 1000 V a více
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 3,84
Each (Supplied on a Reel) (bez DPH)
2
€ 3,84
Each (Supplied on a Reel) (bez DPH)
2
Kúpiť hromadne
| množstvo | Jednotková cena | Cievka |
|---|---|---|
| 2 - 6 | € 3,84 | € 7,68 |
| 8 - 38 | € 3,41 | € 6,82 |
| 40 - 198 | € 3,03 | € 6,06 |
| 200 - 398 | € 2,62 | € 5,24 |
| 400+ | € 2,29 | € 4,58 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
80 A
Kollektor-Emitter-
1200 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
298 W
Gehäusegröße
D2PAK (TO-263)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 11.33 x 4.83mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
150 °C
Podrobnosti o výrobku
Diskrétní Fairchild Semiconductor, 1000 V a více
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products