IGBT ISL9V2040D3ST N-kanálový 10 A 450 V, DPAK (TO-252), počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
10 A
Kollektor-Emitter-
450 V
Maximální napětí řídicí elektroda/emitor
±14V
Maximální ztrátový výkon
130 W
Gehäusegröße
DPAK (TO-252)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
6.73 x 6.22 x 2.39mm
Betriebstemperatur min.
-40 °C
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Skúste to znovu neskôr.
€ 0,73
Each (Supplied on a Reel) (bez DPH)
5
€ 0,73
Each (Supplied on a Reel) (bez DPH)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiDauer-Kollektorstrom max.
10 A
Kollektor-Emitter-
450 V
Maximální napětí řídicí elektroda/emitor
±14V
Maximální ztrátový výkon
130 W
Gehäusegröße
DPAK (TO-252)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
6.73 x 6.22 x 2.39mm
Betriebstemperatur min.
-40 °C
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products