onsemi, standard: AEC-Q101 Zapalovací IGBT ISL9V3040D3ST Typ N-kanálový 21 A 430 V, TO-252, počet kolíků: 3 kolíkový
Technické dokumenty
Špecifikácie
Brand
onsemiProduct Type
Zapalovací IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximální ztrátový výkon Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximální pracovní teplota
175°C
Normy/schválení
RoHS
Řada
EcoSPARK
Jmenovitá energie
300mJ
Automotive Standard
AEC-Q101
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 97,90
€ 1,958 Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
50
€ 97,90
€ 1,958 Each (Supplied on a Reel) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Výrobné balenie (Cievka)
50
| Množstvo | Jednotková cena | Cievka |
|---|---|---|
| 50 - 95 | € 1,958 | € 9,79 |
| 100 - 495 | € 1,70 | € 8,50 |
| 500 - 995 | € 1,492 | € 7,46 |
| 1000+ | € 1,358 | € 6,79 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiProduct Type
Zapalovací IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximální ztrátový výkon Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximální pracovní teplota
175°C
Normy/schválení
RoHS
Řada
EcoSPARK
Jmenovitá energie
300mJ
Automotive Standard
AEC-Q101
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products