IGBT SGP23N60UF N-kanálový 23 A 600 V, TO-220, počet kolíků: 3 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
onsemiMaximální stejnosměrný proud kolektoru
23 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
100 W
Gehäusegröße
TO-220AB
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 4.83 x 16.51mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
150 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Skúste to znovu neskôr.
P.O.A.
50
P.O.A.
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
onsemiMaximální stejnosměrný proud kolektoru
23 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
100 W
Gehäusegröße
TO-220AB
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
10.67 x 4.83 x 16.51mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
150 °C
Podrobnosti o výrobku
Diskrétní IGBT, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products