IGBT modul SK25GAL063 N-kanálový 30 A 600 V, SEMITOP1, počet kolíků: 4 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
SemikronMaximální stejnosměrný proud kolektoru
30 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
SEMITOP1
Konfiguration
Single
Montage-Typ
PCB Mount
Typ kanálu
N
Pinanzahl
4
Konfigurace tranzistoru
Single
Abmessungen
31 x 24 x 15.43mm
Betriebstemperatur min.
-40 °C
Betriebstemperatur max.
150 °C
Krajina pôvodu
Italy
Podrobnosti o výrobku
Jednotlivé moduly IGBT
Semikron nabízí moduly IGBT (Insuleded Gate Bipolar Transistor) v baleních SEMITRANS, SEmiX a SEMITOP v různých topologiích, proudovém a napěťovém hodnocení.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Skúste to znovu neskôr.
P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
JOIN FOR FREE
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Technické dokumenty
Špecifikácie
Brand
SemikronMaximální stejnosměrný proud kolektoru
30 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
SEMITOP1
Konfiguration
Single
Montage-Typ
PCB Mount
Typ kanálu
N
Pinanzahl
4
Konfigurace tranzistoru
Single
Abmessungen
31 x 24 x 15.43mm
Betriebstemperatur min.
-40 °C
Betriebstemperatur max.
150 °C
Krajina pôvodu
Italy
Podrobnosti o výrobku
Jednotlivé moduly IGBT
Semikron nabízí moduly IGBT (Insuleded Gate Bipolar Transistor) v baleních SEMITRANS, SEmiX a SEMITOP v různých topologiích, proudovém a napěťovém hodnocení.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products