řada: STB11NM80 Napájecí MDmesh MOSFET Typ N-kanálový 11 A 800 V STMicroelectronics, TO-263, počet kolíků: 3 kolíkový

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.

• Low input capacitance and gate charge
• Low gate input resistance
• Best RDS(on)Qg in the industry
• Applications
• Switching applications