STMicroelectronics IGBT STGB10NC60HDT4 Typ N-kanálový 20 A 600 V, TO-263, počet kolíků: 3 kolíkový Povrch 1 MHz
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
20A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximální ztrátový výkon Pd
65W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
150°C
Länge
10.4mm
Height
4.6mm
Normy/schválení
RoHS
Automotive Standard
No
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 10,44
€ 2,088 Each (In a Pack of 5) (bez DPH)
Štandardný
5
€ 10,44
€ 2,088 Each (In a Pack of 5) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Štandardný
5
| Množstvo | Jednotková cena | Balík |
|---|---|---|
| 5 - 20 | € 2,088 | € 10,44 |
| 25 - 45 | € 1,984 | € 9,92 |
| 50 - 120 | € 1,788 | € 8,94 |
| 125 - 245 | € 1,604 | € 8,02 |
| 250+ | € 1,526 | € 7,63 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
20A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximální ztrátový výkon Pd
65W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
150°C
Länge
10.4mm
Height
4.6mm
Normy/schválení
RoHS
Automotive Standard
No
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products