STMicroelectronics, standard: AEC-Q101 IGBT STGB18N40LZT4 Typ N-kanálový 30 A 420 V, TO-263, počet kolíků: 3 kolíkový
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
420V
Maximální ztrátový výkon Pd
150W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
16 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.7V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
175°C
Länge
10.4mm
Height
4.6mm
Normy/schválení
No
Řada
Automotive Grade
Automotive Standard
AEC-Q101
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 11,16
€ 2,232 Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
5
€ 11,16
€ 2,232 Each (Supplied on a Reel) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Výrobné balenie (Cievka)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
420V
Maximální ztrátový výkon Pd
150W
Package Type
TO-263
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
16 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.7V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
175°C
Länge
10.4mm
Height
4.6mm
Normy/schválení
No
Řada
Automotive Grade
Automotive Standard
AEC-Q101
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products