IGBT STGB8NC60KDT4 N-kanálový 15 A 600 V, D2PAK (TO-263), počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
15 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
D2PAK (TO-263)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
6.6 x 6.2 x 2.4mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
+150 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
Each (In a Pack of 5) (bez DPH)
Štandardný
5
P.O.A.
Each (In a Pack of 5) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Štandardný
5
Informácie o zásobách sú dočasne nedostupné.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
15 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
D2PAK (TO-263)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
6.6 x 6.2 x 2.4mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
+150 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products