IGBT STGD18N40LZT4 N-kanálový 30 A 420 V, DPAK (TO-252), počet kolíků: 3 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsDauer-Kollektorstrom max.
30 A
Kollektor-Emitter-
420 V
Maximální napětí řídicí elektroda/emitor
16V
Maximální ztrátový výkon
125 W
Gehäusegröße
DPAK (TO-252)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
6.6 x 6.2 x 2.4mm
Maximální pracovní teplota
175 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 1,85
Each (Supplied as a Tape) (bez DPH)
5
€ 1,85
Each (Supplied as a Tape) (bez DPH)
5
Kúpiť hromadne
| množstvo | Jednotková cena | Páska |
|---|---|---|
| 5 - 20 | € 1,85 | € 9,25 |
| 25 - 45 | € 1,76 | € 8,80 |
| 50 - 120 | € 1,58 | € 7,90 |
| 125 - 245 | € 1,42 | € 7,10 |
| 250+ | € 1,35 | € 6,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsDauer-Kollektorstrom max.
30 A
Kollektor-Emitter-
420 V
Maximální napětí řídicí elektroda/emitor
16V
Maximální ztrátový výkon
125 W
Gehäusegröße
DPAK (TO-252)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
6.6 x 6.2 x 2.4mm
Maximální pracovní teplota
175 °C
Betriebstemperatur min.
-55 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products