IGBT STGD5H60DF N-kanálový 10 A 600 V, DPAK (TO-252), počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
10 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
83 W
Gehäusegröße
DPAK (TO-252)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
6.6 x 6.2 x 2.4mm
Betriebstemperatur min.
-55 °C
Kapacitance hradla
855pF
Maximální pracovní teplota
175 °C
Jmenovitá energie
221mJ
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 0,85
Each (In a Pack of 10) (bez DPH)
10
€ 0,85
Each (In a Pack of 10) (bez DPH)
10
Kúpiť hromadne
| množstvo | Jednotková cena | Balík |
|---|---|---|
| 10 - 40 | € 0,85 | € 8,50 |
| 50 - 90 | € 0,80 | € 8,00 |
| 100 - 240 | € 0,72 | € 7,20 |
| 250 - 490 | € 0,65 | € 6,50 |
| 500+ | € 0,62 | € 6,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
10 A
Kollektor-Emitter-
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
83 W
Gehäusegröße
DPAK (TO-252)
Montage-Typ
Surface Mount
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
6.6 x 6.2 x 2.4mm
Betriebstemperatur min.
-55 °C
Kapacitance hradla
855pF
Maximální pracovní teplota
175 °C
Jmenovitá energie
221mJ
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products