STMicroelectronics Trenchová brána, field-stope IGBT Typ N-kanálový 10 A 600 V, TO-252, počet kolíků: 3 kolíkový Povrch
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
Trenchová brána, field-stope IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximální ztrátový výkon Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
175°C
Länge
6.6mm
Height
2.4mm
Normy/schválení
RoHS
Řada
H
Jmenovitá energie
221mJ
Automotive Standard
No
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 1 190,13
€ 0,476 Each (On a Reel of 2500) (bez DPH)
2500
€ 1 190,13
€ 0,476 Each (On a Reel of 2500) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
Trenchová brána, field-stope IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximální ztrátový výkon Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
175°C
Länge
6.6mm
Height
2.4mm
Normy/schválení
RoHS
Řada
H
Jmenovitá energie
221mJ
Automotive Standard
No
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products