STMicroelectronics IGBT STGD5NB120SZT4 Typ N-kanálový 5 A 1200 V, TO-252, počet kolíků: 3 kolíkový Povrch 690 ns
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximální ztrátový výkon Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Spínací napětí
690ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-10°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximální pracovní teplota
150°C
Height
2.2mm
Länge
6.2mm
Normy/schválení
JEDEC JESD97, ECOPACK
Řada
H
Jmenovitá energie
12.68mJ
Automotive Standard
No
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 36,95
€ 1,478 Each (Supplied on a Reel) (bez DPH)
Výrobné balenie (Cievka)
25
€ 36,95
€ 1,478 Each (Supplied on a Reel) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Výrobné balenie (Cievka)
25
| Množstvo | Jednotková cena | Cievka |
|---|---|---|
| 25 - 45 | € 1,478 | € 7,39 |
| 50 - 120 | € 1,332 | € 6,66 |
| 125 - 245 | € 1,198 | € 5,99 |
| 250+ | € 1,136 | € 5,68 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximální ztrátový výkon Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pinanzahl
3
Spínací napětí
690ns
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-10°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximální pracovní teplota
150°C
Height
2.2mm
Länge
6.2mm
Normy/schválení
JEDEC JESD97, ECOPACK
Řada
H
Jmenovitá energie
12.68mJ
Automotive Standard
No
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products