IGBT STGF7NC60HD N-kanálový 10 A 600 V, TO-220FP, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
10 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
TO-220
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
10.4 x 4.6 x 9.3mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
+150 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
P.O.A.
Each (Supplied in a Tube) (bez DPH)
Výrobné balenie (Tuba)
2
P.O.A.
Each (Supplied in a Tube) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Výrobné balenie (Tuba)
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
10 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Gehäusegröße
TO-220
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
10.4 x 4.6 x 9.3mm
Betriebstemperatur min.
-55 °C
Maximální pracovní teplota
+150 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products