STMicroelectronics IGBT STGP3HF60HD Typ N-kanálový 7.5 A 600 V, TO-220, počet kolíků: 3 kolíkový Průchozí otvor
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximální ztrátový výkon Pd
38W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pinanzahl
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
150°C
Normy/schválení
RoHS
Automotive Standard
No
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 26,46
€ 0,529 Each (In a Tube of 50) (bez DPH)
50
€ 26,46
€ 0,529 Each (In a Tube of 50) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
50
| Množstvo | Jednotková cena | Tuba |
|---|---|---|
| 50 - 50 | € 0,529 | € 26,46 |
| 100 - 200 | € 0,503 | € 25,14 |
| 250 - 450 | € 0,452 | € 22,62 |
| 500+ | € 0,45 | € 22,49 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximální ztrátový výkon Pd
38W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pinanzahl
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
150°C
Normy/schválení
RoHS
Automotive Standard
No
Krajina pôvodu
China
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products