STMicroelectronics IGBT STGW40H65FB Typ N-kanálový 80 A 650 V, TO-247, počet kolíků: 3 kolíkový Průchozí otvor 1 MHz
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximální ztrátový výkon Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
175°C
Länge
15.75mm
Height
20.15mm
Normy/schválení
RoHS
Řada
H
Automotive Standard
No
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 5,40
€ 2,70 Each (In a Pack of 2) (bez DPH)
Štandardný
2
€ 5,40
€ 2,70 Each (In a Pack of 2) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Štandardný
2
| Množstvo | Jednotková cena | Balík |
|---|---|---|
| 2 - 2 | € 2,70 | € 5,40 |
| 4+ | € 2,57 | € 5,14 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximální ztrátový výkon Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
175°C
Länge
15.75mm
Height
20.15mm
Normy/schválení
RoHS
Řada
H
Automotive Standard
No
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products