IGBT STGW80H65DFB N-kanálový 120 A 650 V, TO-247, počet kolíků: 3 Jednoduchý
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
120 A
Maximální napětí emitoru/kolektoru
650 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
469 W
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
15.75 x 5.15 x 20.15mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 5,29
€ 5,29 Each (bez DPH)
Štandardný
1
€ 5,29
€ 5,29 Each (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Štandardný
1
| Množstvo | Jednotková cena |
|---|---|
| 1 - 4 | € 5,29 |
| 5 - 9 | € 5,02 |
| 10 - 24 | € 4,52 |
| 25 - 49 | € 4,07 |
| 50+ | € 3,88 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximální stejnosměrný proud kolektoru
120 A
Maximální napětí emitoru/kolektoru
650 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximální ztrátový výkon
469 W
Gehäusegröße
TO-247
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Konfigurace tranzistoru
Single
Abmessungen
15.75 x 5.15 x 20.15mm
Betriebstemperatur min.
-55 °C
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products