IGBT STGWT60V60DLF N-kanálový 60 A 600 V, TO-3P, počet kolíků: 3 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximum Power Dissipation
375 W
Package Type
TO-3PN
Montage-Typ
Through Hole
Channel Type
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
15.7 x 5.7 x 26.7mm
Minimum Operating Temperature
-55 °C
Maximální pracovní teplota
+175 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
P.O.A.
Each (Supplied in a Tube) (bez DPH)
Výrobné balenie (Tuba)
5
P.O.A.
Each (Supplied in a Tube) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Výrobné balenie (Tuba)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsMaximum Continuous Collector Current
60 A
Maximum Collector Emitter Voltage
600 V
Maximální napětí řídicí elektroda/emitor
±20V
Maximum Power Dissipation
375 W
Package Type
TO-3PN
Montage-Typ
Through Hole
Channel Type
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
15.7 x 5.7 x 26.7mm
Minimum Operating Temperature
-55 °C
Maximální pracovní teplota
+175 °C
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products