STMicroelectronics IGBT STGWT80H65DFB Typ N-kanálový 650 V, TO-3P, počet kolíků: 3 kolíkový Průchozí otvor 1 MHz
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximální ztrátový výkon Pd
469W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
175°C
Normy/schválení
RoHS
Řada
HB
Automotive Standard
No
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
€ 29,40
€ 5,88 Each (Supplied in a Tube) (bez DPH)
Výrobné balenie (Tuba)
5
€ 29,40
€ 5,88 Each (Supplied in a Tube) (bez DPH)
Informácie o zásobách sú dočasne nedostupné.
Výrobné balenie (Tuba)
5
| Množstvo | Jednotková cena |
|---|---|
| 5 - 9 | € 5,88 |
| 10 - 24 | € 5,29 |
| 25 - 49 | € 4,76 |
| 50+ | € 4,52 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximální ztrátový výkon Pd
469W
Package Type
TO-3P
Mount Type
Through Hole
Channel Type
Type N
Pinanzahl
3
Spínací napětí
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-10°C
Maximální pracovní teplota
175°C
Normy/schválení
RoHS
Řada
HB
Automotive Standard
No
Podrobnosti o výrobku
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products