IGBT GT50JR22 N-kanálový 50 A 600 V, TO-3P, počet kolíků: 3 1MHz Jednoduchý
Technické dokumenty
Špecifikácie
Brand
ToshibaDauer-Kollektorstrom max.
50 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±25V
Maximální ztrátový výkon
230 W
Gehäusegröße
TO-3PN
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
15.5 x 4.5 x 20mm
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Informácie o zásobách sú dočasne nedostupné.
Skúste to znovu neskôr.
€ 5,99
€ 5,99 Each (bez DPH)
Štandardný
1
€ 5,99
€ 5,99 Each (bez DPH)
Štandardný
1
Kúpiť hromadne
| množstvo | Jednotková cena |
|---|---|
| 1 - 9 | € 5,99 |
| 10 - 49 | € 3,79 |
| 50 - 124 | € 3,70 |
| 125 - 249 | € 3,67 |
| 250+ | € 3,58 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technické dokumenty
Špecifikácie
Brand
ToshibaDauer-Kollektorstrom max.
50 A
Maximální napětí emitoru/kolektoru
600 V
Maximální napětí řídicí elektroda/emitor
±25V
Maximální ztrátový výkon
230 W
Gehäusegröße
TO-3PN
Montage-Typ
Through Hole
Typ kanálu
N
Pinanzahl
3
Rychlost spínání
1MHz
Konfigurace tranzistoru
Single
Abmessungen
15.5 x 4.5 x 20mm
Betriebstemperatur max.
175 °C
Podrobnosti o výrobku
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products